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Record Nr. |
UNINA9910634054203321 |
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Titolo |
Theory of Defects in Semiconductors [[electronic resource] /] / edited by David A. Drabold, Stefan Estreicher |
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Pubbl/distr/stampa |
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Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2007 |
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ISBN |
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1-281-39210-3 |
9786611392109 |
3-540-33401-7 |
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Edizione |
[1st ed. 2007.] |
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Descrizione fisica |
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1 online resource (XIV, 295 p. 60 illus.) |
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Collana |
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Topics in Applied Physics, , 0303-4216 ; ; 104 |
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Disciplina |
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Soggetti |
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Optical materials |
Electronics - Materials |
Condensed matter |
Lasers |
Photonics |
Engineering |
Optical and Electronic Materials |
Condensed Matter Physics |
Optics, Lasers, Photonics, Optical Devices |
Engineering, general |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Bibliographic Level Mode of Issuance: Monograph |
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Nota di contenuto |
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1. Defect Theroy: An Armchair History -- 2. Supercell Methods for Defect Calculations -- 3. Marker-Method Calculations for Electrical Levels Using Gaussian-orbital Basis-sets -- 4. Dynamical Matrices and Free Energies -- 5. The Calculation of Free Energies in Semiconductors: Defects, Transitions and Phase Diagrams -- 6. Quantum Monte Carlo Techniques and Defects in Semiconductors -- 7. Quasiparticle Calculations for Point Defects at Semiconductor Surfaces -- 8. Multiscale Modelling of Defects in Semiconductors: A Novel Molecular Dynamics Scheme -- 9. Empirical Molecular Dynamics: Possibilities, |
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Requirements, and Limitations -- 10. Defects in Amorphous Semiconductors: Amorphous Silicon -- 11. Light-induced Effects in Amorphous and Glassy Solids. |
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Sommario/riassunto |
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Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation. |
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