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Record Nr. |
UNINA9910634034503321 |
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Titolo |
Physics of ferroelectrics : a modern perspective / / Karin M. Rabe, Charles H. Ahn, Jean-Marc Triscone, eds |
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Pubbl/distr/stampa |
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Berlin ; ; New York, : Springer, c2007 |
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ISBN |
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1-281-25078-3 |
9786611250782 |
3-540-34591-4 |
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Edizione |
[1st ed. 2007.] |
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Descrizione fisica |
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1 online resource (396 p.) |
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Collana |
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Topics in applied physics, , 0303-4216 ; ; v. 105 |
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Altri autori (Persone) |
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RabeKarin M (Karin Maria) |
AhnCharles H |
TrisconeJean-Marc |
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Disciplina |
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Soggetti |
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Ferroelectricity |
Ferroelectric devices - Materials |
Ferroelectric thin films |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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"With 129 figures and 24 tables." |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Appendix B – Material–Substrate Combinations Tables -- Modern Physics of Ferroelectrics: Essential Background -- Theory of Polarization: A Modern Approach -- A Landau Primer for Ferroelectrics -- First-Principles Studies of Ferroelectric Oxides -- Analogies and Differences between Ferroelectrics and Ferromagnets -- Growth and Novel Applications of Epitaxial Oxide Thin Films -- Ferroelectric Size Effects -- Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films -- APPENDIX A – Landau Free-Energy Coefficients. |
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Sommario/riassunto |
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During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book |
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