Mm-wave circuit design in 16nm FinFET for 6G applications / / Bart Philippe and Patrick Reynaert

• Record Nr.: UNINA9910627270203321
• Autore: Philippe Bart
• Pubbl/distr/stampa: Cham, Switzerland : , : Springer, , [2022]; ©2022
• ISBN: 3-031-11224-5
• Descrizione fisica: 1 online resource (145 pages)
• Collana: Analog Circuits and Signal Processing
• Disciplina: 621.39732
• Soggetti: Metal oxide semiconductors, Complementary; Metal oxide semiconductors, Complementary - Design
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di contenuto: Intro -- Preface -- Contents -- Acronyms and Symbols -- 1 Introduction -- 1.1 Toward the Sixth-Generation (6G) Mobile Networks -- 1.1.1 Millimeter Wave to Increase Data Rates -- 1.2 Millimeter Wave in FinFET CMOS, the Next Step -- 1.3 Book Outline -- References -- 2 Basic Components in mm-Wave Design -- 2.1 Actives -- 2.1.1 fT, fmax a FoM for mm-Wave Transistors -- 2.1.2 The Effect of Scaling -- mm-Wave in FinFET -- 2.1.3 Transistor Layout and mm-Wave Performance -- 2.2 Passives -- 2.2.1 Capacitors -- 2.2.2 Inductors -- 2.2.3 Transformers -- 2.2.3.1 Transformer Topology -- 2.2.4 Transmission Lines -- 2.3 Basic Design of mm-Wave Circuits -- 2.3.1 A Capacitive Neutralized mm-Wave Amplifier -- 2.3.2 Design of mm-Wave Interconnects -- 2.3.2.1 Transformer Matching: A Coupled RLC Resonator -- 2.4 Conclusion -- References -- 3 Frequency Generation -- 3.1 VCO Basics -- 3.1.1 Brief on Phase Noise -- 3.1.2 Frequency Tuning -- 3.1.2.1 Varactor Tuning -- 3.1.2.2 Switched Capacitors -- 3.1.2.3 Switched Inductors -- 3.2 LO Architectures and Trends at mm-Wave -- 3.3 Challenges of a Deeply Scaled Technology at mm-Wave -- 3.4 A 4th Order Transformer-Based Resonator -- 3.5 Design Example: A Fundamental Oscillator -- 3.5.1 The Cross-Coupled Pair -- 3.5.2 The Resonator Design -- 3.5.3 Measurement Results -- 3.6 Design Example: A Harmonic Oscillator -- 3.6.1 Basic Principle -- 3.6.2 Proposed Design -- 3.6.3 Output Buffers -- 3.6.3.1 Fundamental ; Buffer -- 3.6.3.2 Third Harmonic Buffer -- 3.6.4 Measurement Results -- 3.7 Conclusion -- References -- 4 Power Amplification -- 4.1 Introduction -- 4.2 Power Amplifier Basics -- 4.2.1 Gain and Power -- 4.2.2 Efficiency -- 4.2.3 PA Linearity -- 4.2.4 PA Classes and Biasing -- 4.2.5 Challenge at mm-Wave in a Deeply Scaled Technology -- 4.2.5.1 The Effect of Drain Resistance -- 4.2.5.2 Limits on Output Power.; 4.3 Design Example: A Class-A Two-Way Power Combining D-Band PA in 16nm FinFET -- 4.3.1 Design of the 16nm FinFET Transistor -- 4.3.2 Build-up of the Power Amplifier -- 4.3.2.1 Power Combining to Extend the Power Limit -- 4.3.2.2 Completing the Circuit with Drivers -- 4.3.3 Measurement Results -- 4.4 Conclusion -- References -- 5 A D-band Direct-Conversion Transmitter with Enhanced PA -- 5.1 Efficiency Enhancement Techniques -- 5.1.1 Common Efficiency Enhancement Techniques -- 5.1.1.1 Doherty Power Amplifier -- 5.1.1.2 Outphasing PA -- 5.1.1.3 Conclusion: Difficulties for &gt -- 100 GHz Power Amplifiers -- 5.1.2 A Sequential Power Amplifier -- 5.1.3 Conclusion -- 5.2 Linearization Techniques by Dynamic Bias -- 5.2.1 AM-AM Compensation -- 5.2.2 AM-PM Compensation -- 5.2.2.1 Capacitive Compensation -- 5.2.2.2 Fixed Phase Offset -- 5.3 Design Example: A Direct-Conversion TX with Enhanced PA -- 5.3.1 The Dynamic Bias Enhanced PA -- 5.3.1.1 Amplifier Stages and Interstage Matching -- 5.3.1.2 The Dynamic Bias Circuit -- 5.3.1.3 AM-PM Control -- 5.3.1.4 PA Simulation Results -- 5.3.2 The I/Q Modulator and LO Generation -- 5.3.2.1 Quadrature LO Circuit -- 5.3.2.2 The Double Balanced IQ-Mixer -- 5.4 Measurements and Discussion -- 5.4.1 Power Amplifier Measurements -- 5.4.1.1 Small-Signal Measurement -- 5.4.1.2 Large Signal Measurement -- 5.4.1.3 Conclusion PA Measurements -- 5.4.2 Transmitter Measurements -- 5.4.2.1 Continuous Wave Measurements and Characterization -- 5.4.2.2 Modulated Data Measurements -- 5.5 Conclusion -- References -- Index.