1.

Record Nr.

UNINA9910483710403321

Titolo

Emerging non-volatile memory technologies : physics, engineering, and applications / / Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors

Pubbl/distr/stampa

Singapore : , : Springer, , [2021]

©2021

ISBN

981-15-6912-6

Edizione

[1st ed. 2021.]

Descrizione fisica

1 online resource (VIII, 438 p. 254 illus., 231 illus. in color.)

Disciplina

621.39732

Soggetti

Nonvolatile random-access memory - Technological innovations

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di contenuto

Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions -- Spin Transfer Torque Magnetoresistive Random Access Memory -- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications -- Electric-field-controlled MRAM: Physics and Applications -- Chiral Magnetic Domain Wall & Skyrmion Memory Devices -- Circuit Design for Non-volatile Magnetic Memory -- Domain Wall Programmable Magnetic Logic -- 3D Nanomagnetic Logic -- Spintronics for Neuromorphic Engineering -- Resistive Random Access Memory: Device Physics and Array Architectures -- RRAM Characterization and Modelling -- RRAM-based Neuromorphic Computing Systems -- An Automatic Sound Classification Framework with Non-Volatile Memory.

Sommario/riassunto

This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic



engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.