Highly integrated gate drivers for Si and GaN power transistors / / Achim Seidel, Bernhard Wicht

• Record Nr.: UNINA9910483543203321
• Autore: Seidel Achim
• Pubbl/distr/stampa: Cham, Switzerland : , : Springer, , [2021]; ©2021
• ISBN: 3-030-68940-9
• Descrizione fisica: 1 online resource (xvii, 124 pages) : illustrations
• Disciplina: 621.38412
• Soggetti: Power transistors
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Intro -- Preface -- Contents -- Acronyms -- List of Abbreviations -- List of Symbols -- 1 Introduction -- 1.1 Motivation -- 1.2 Scope and Outline of This Book -- References -- 2 Fundamentals -- 2.1 Gate Drivers and Power Stages -- 2.1.1 Driver Configurations and Building Blocks -- 2.1.2 Gate Driver Output Stage -- 2.1.3 Basic Gate Driver Operation -- 2.1.4 Gate Loop Parasitics -- 2.1.5 Buffer Capacitor CDRV -- 2.1.6 Gate Driver Types -- 2.1.7 Efficiency of Resonant and Non-resonant Gate Drivers -- 2.1.8 Power-Transistor Switching Losses -- 2.2 Power Transistors and Applications -- 2.2.1 Silicon Transistors -- 2.2.2 GaN Transistor -- 2.2.3 GaN Versus Silicon Transistors -- 2.2.3.1 Losses -- 2.2.3.2 Safe-Operating Area (SOA) -- 2.2.3.3 Gate Control -- 2.2.3.4 Applications -- 2.3 Gate Drive Schemes -- 2.3.1 Unipolar and Bipolar Gate Drive Scheme -- 2.3.2 Multi-level Gate Drive Schemes and Active Gate Control -- 2.4 Gate Driver Supply and Signal Transmission -- 2.4.1 Isolated and Non-isolated Gate Driver Supplies -- 2.4.2 Bootstrap Driver Supply -- 2.4.3 Signal Transmission -- 2.4.4 Combined Driver Supply and Signal Transmission -- 2.4.5 Coupling Currents Between Low-Side and High-Side -- Appendix A: Exemplary Gate Loop Inductance Values -- Appendix B: Losses Caused by Coss -- References -- 3 Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- 3.1 The Concept of HVCS -- 3.2 Circuit Options of a Gate Driver Output Stage Based on HVCS -- 3.3 Driver Implementation -- 3.3.1 Charge Pump Concept -- 3.3.2 Series Regulator -- 3.3.3 Level ; Shifters -- 3.3.3.1 Level Up Shifter -- 3.3.3.2 Level Down Shifter -- 3.3.4 Gate Driver Circuit -- 3.4 Further Applications of the Proposed Bootstrap Circuit -- 3.5 Bootstrap Capacitor Sizing -- 3.5.1 Sizing Equations -- 3.5.2 Sizing Equations for Stacked Bootstrap Capacitors -- 3.5.3 Sizing Example.; 3.5.4 Comparison with Conventional Bootstrap Circuit -- 3.6 Experimental Results -- 3.7 Comparison with Prior Art -- Appendix: Level Shifter Circuit -- References -- 4 Gate Drivers Based on High-Voltage Energy Storing (HVES) -- 4.1 The Concept of HVES -- 4.1.1 Gate Charge Delivery -- 4.1.2 Gate Drive Speed -- 4.1.3 Efficiency Considerations of Buffer Implementation Methods -- 4.1.4 Bootstrap Capacitor Voltage Clamping -- 4.1.5 Design Scenarios with HVES -- 4.1.6 Bipolar Gate Drive Operation -- 4.2 Gate Driver Implementation -- 4.2.1 Gate Driver Architectures -- 4.2.2 Gate Driver Implementation for a Non-isolated and an Isolated Supply -- 4.2.3 Operation as High-Side Gate Driver -- 4.2.4 GaN GIT Support -- 4.2.5 Driver Sub-circuits -- 4.2.5.1 VHV Control -- 4.2.5.2 ``MHVx Control'' and Active Rectifier -- 4.2.5.3 Level Shifter -- 4.3 Experimental Results -- 4.4 State-of-the-Art Comparison and Limitations -- 4.4.1 Limitations of Gate Drivers Based on HVES -- 4.4.2 HVES Versus HVCS and Conventional Gate Drivers -- 4.4.3 Comparison with Prior Art -- References -- 5 Gate Drivers for Large Gate Loops Based on HVES -- 5.1 Introduction -- 5.2 Concept -- 5.3 Implementation -- 5.4 Experimental Results and Comparison to Prior Art -- References -- 6 Outlook and Future Work -- 6.1 Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- 6.2 Gate Drivers Based on High-Voltage Energy Storing (HVES) -- 6.3 Gate Drivers for Large Gate Loops -- 6.4 Boost Converter High-Side Driver Supply -- References -- 7 Conclusion -- References -- Index.