1.

Record Nr.

UNINA9910483112403321

Autore

Camiola Vito Dario

Titolo

Charge Transport in Low Dimensional Semiconductor Structures : The Maximum Entropy Approach / / by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano

Pubbl/distr/stampa

Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020

ISBN

3-030-35993-X

Edizione

[1st ed. 2020.]

Descrizione fisica

1 online resource (XVI, 337 p. 83 illus., 23 illus. in color.)

Collana

The European Consortium for Mathematics in Industry ; ; 31

Disciplina

621.3815284

Soggetti

Mathematical physics

Applied mathematics

Engineering mathematics

Nanotechnology

Mathematical Physics

Theoretical, Mathematical and Computational Physics

Mathematical and Computational Engineering

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di contenuto

Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.

Sommario/riassunto

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-



dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.