Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai

• Record Nr.: UNINA9910462785103321
• Pubbl/distr/stampa: Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012]; ©2012
• ISBN: 3-03813-856-8
• Descrizione fisica: 1 online resource (300 p.)
• Collana: Materials science forum ; ; vol. 725
• Altri autori (Persone): Yamada-KanetaHiroshi; SakaiAkira (Professor of engineering science)
• Disciplina: 620.112972
• Soggetti: Semiconductors - Defects; Physics; Electronic books.
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di contenuto: Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers; Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation ; of Nitrogen Atoms in 4H-SiC Epitaxial Layers; Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride; Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal; Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research; EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
• Sommario/riassunto: This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors. Review from Book News Inc.: Drawn from papers del