|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910460612803321 |
|
|
Autore |
Sangster Raymond C. |
|
|
Titolo |
Formation of silicon nitride from the 19th to the 21st century : a comprehensive summary and guide to the world literature / / Raymond C. Sangster ; updated and revised by David J. Fisher |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
[Pfäffikon], Switzerland : , : Trans Tech Publications Ltd, , 2015 |
|
©2015 |
|
|
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Edizione |
[Second edition, revised and updated.] |
|
|
|
|
|
Descrizione fisica |
|
1 online resource (1001 p.) |
|
|
|
|
|
|
Collana |
|
Materials Science Foundations ; ; Volumes 84-85 |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Silicon nitride |
Electronic books. |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references at the end of each chapters. |
|
|
|
|
|
|
Nota di contenuto |
|
Formation of Silicon Nitride from the 19th to the 21st Century; Preface; Table of Contents; Part A: In the Beginning; Part B: Technical Context of Silicon Nitride Formation; Part C: Si3N4 Products, Uses and Markets; Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species; Part E: Si3N4 Powder Formation from Si(Powder)/N2(g); Part F: Fabrication of Reaction Bonded Silicon Nitride; Part G: Si3N4 from Si/N2 under Vigorous Conditions; Part H: Si3N4 Formation by Reaction of Si with N-Compounds; Part Í: Si3N4 by Nitridation of Si-O Based Materials |
Part J: Si3N4 Formation from Si-N Based MaterialsPart K: Comparative Overview and Summary of Si3N4 CVD; Part L: Si3N4 by CVD Nitridation of Si-H Compounds; Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes; Part N: Si3N4 Formation in Si-C-N Systems; Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other |
|
|
|
|
|
|
|
|
Sommario/riassunto |
|
The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to |
|
|
|
|