1.

Record Nr.

UNINA9910458627603321

Titolo

III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng

Pubbl/distr/stampa

London, : Imperial College Press, c2006

ISBN

1-281-86721-7

9786611867218

1-86094-903-7

Descrizione fisica

1 online resource (440 p.)

Altri autori (Persone)

FengZhe Chuan

Disciplina

541.377

541/.377

621.38152

Soggetti

Semiconductors - Materials

Nitrides

Electronic books.

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

CONTENTS               ; Preface              ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials                                                                           ; 1.Introduction                     ; 2.Experiment                   ; 3.Material Properties                            ; 3.1. Undoped GaN layers                              ; 3.2. Si-doped GaN layers                               ; 3.3. Mg-doped GaN layers                               ; 3.4. Zn-doped GaN layers                               ; 3.5. AlN layers

3.6. AlGaN layers                        3.7. InN and InGaN layers                                ; 4.New directions in HVPE development                                           ; 4.1. Large area and multi wafer HVPE growth                                                  ; 4.2. Multi-layer structures                                  ; 4.3. P-n junctions                         ; 4.4. Structures with two dimensional carrier gas                                                       ; 4.5. Nano structures and porous materials

5.Applications of HVPE grown group III nitride materials                                                               5.1. Substrate applications                                  ; 5.1.1. Template substrates                                 ; 5.1.2. Free-standing substrates                                      ; 5.1.3. Bulk substrates                             ; 5.2. Device Applications                              



; 6.Conclusions

Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials                                                                             1. History of Reactor Development for III-Nitrides                                                         ; 2. Types of Planar Reactors                                  ; 3. Reactor Modeling                          ; 3.1. Growth Kinetics of Group-III Nitride MOVPE                                                      ; 3.2. Modeling of MOVPE processes

3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology                                                                          3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies                                                                            ; 4. In-situ Technology in Nitride MOCVD Systems                                                     ; 5. The Mass Production of GaN and Related Materials                                                          ; 5.1. Optoelectronic Device Structures

5.2. Growth in the 8x4 inch Configuration

Sommario/riassunto

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.  Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes th