1.

Record Nr.

UNINA9910454319803321

Titolo

Radiation effects and soft errors in integrated circuits and electronic devices [[electronic resource] /] / editors, R.D. Schrimpf, D.M. Fleetwood

Pubbl/distr/stampa

Singapore ; ; New Jersey, : World Scientific Pub., c2004

ISBN

1-281-93459-3

9786611934590

981-279-470-0

Descrizione fisica

1 online resource (349 p.)

Collana

Selected topics in electronics and systems ; ; vol. 34

Altri autori (Persone)

SchrimpfRonald Donald

FleetwoodD. M (Dan M.)

Disciplina

621.3815

Soggetti

Electronic circuits - Effect of radiation on

Integrated circuits - Effect of radiation on

Electronic books.

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

CONTENTS               ; Preface              ; Single Event Effects in Avionics and on the Ground                                                         ; 1. Introduction                      ; 2. Similarities between SEE in Avionics and on the Ground                                                                ; 3. Differences Between SEE in Avionics and on the Ground                                                               ; 4. Atmospheric and Ground Level Environments                                                   ; 5. SEE Data in devices

6. Summary                 Soft Errors in Commercial Integrated Circuits                                                    ; 1. Introduction                      ; 2. Scaling trends for memory devices                                           ; 3. Seating trend for peripheral logic devices                                                    ; 4. Conclusion                    ; Single-Event Effects in lll-V Semiconductor Electronics                                                              ; 1. Introduction

2. Single-Event Effects in lll-V Electronic Devices                                                          3. Summary and Conclusions                                 ; Investigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser                                                                                              



; 1. Basic Mechanisms of a SET                                   ; 2. SET Laser Testing                           ; 3. Experimental set-up for SET laser testing                                                   ; 4. Results

5. Conclusions                     System Level Single Event Upset Mitigation Strategies                                                            ; 1. Introduction                      ; 2. Systems Engineering for Energetic Particle Environment Compatibility                                                                              ; 3. Fault Tolerant Systems Strategies                                           ; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits

1. Introduction                      2. Radiation Mechanisms in Mixed-Signal Integrated Circuits                                                                  ; 3. Process Component and Layout Choices for Hardened-by-Design Circuits                                                                              ; 4. Total Dose Hardening                              ; 5. Single-Event Effect Hardening                                       ; 6. Dose-Rate Effect Hardening                                    ; 7. Conclusion

A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits

Sommario/riassunto

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes t