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Record Nr. |
UNINA9910450985103321 |
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Autore |
Baliga B. Jayant <1948-> |
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Titolo |
Silicon carbide power devices [[electronic resource] /] / B. Jayant Baliga |
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Pubbl/distr/stampa |
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New Jersey, : World Scientific, c2005 |
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ISBN |
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Descrizione fisica |
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1 online resource (xxi, 503 p. ) : ill. (some col.) |
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Disciplina |
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Soggetti |
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Silicon carbide - Electric properties |
Semiconductors |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Bibliographic Level Mode of Issuance: Monograph |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. |
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