|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910450673803321 |
|
|
Autore |
Galler Martin <1977-> |
|
|
Titolo |
Multigroup equations for the description of the particle transport in semiconductors [[electronic resource] /] / Martin Galler |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Hackensack, N.J., : World Scientific, c2005 |
|
|
|
|
|
|
|
ISBN |
|
1-281-90577-1 |
9786611905774 |
981-270-338-1 |
|
|
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (247 p.) |
|
|
|
|
|
|
Collana |
|
Series on advances in mathematics for applied sciences ; ; v. 70 |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Transport theory - Mathematics |
Semiconductors - Mathematics |
Electronic books. |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references (p. 217-223) and index. |
|
|
|
|
|
|
Nota di contenuto |
|
Preface; Contents; 1. Introduction; 2. The Bloch-Boltzmann-Peierls Equations; 3. Multigroup Model Equations for Polar Semiconductors; 4. Particle Transport in Indium Phosphide; 5. Particle Transport in Gallium Arsenide; 6. Multigroup Equations for Degenerated Carrier Gases; 7. The Two-dimensional Electron Gas; 8. The Multigroup-WENO Solver for Semiconductor Device Simulation; 9. Simulation of Silicon Devices; 10. Simulation of Gallium Arsenide Devices; 11. Conclusion; Bibliography; Related Publications of the Author; Index |
|
|
|
|
|
|
|
|
Sommario/riassunto |
|
Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a s |
|
|
|
|
|
|
|