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Record Nr. |
UNINA9910450147803321 |
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Titolo |
GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis |
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Pubbl/distr/stampa |
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Singapore ; ; River Edge, N.J., : World Scientific, c2004 |
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ISBN |
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1-281-34762-0 |
9786611347628 |
981-256-236-2 |
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Edizione |
[33th ed.] |
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Descrizione fisica |
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1 online resource (295 p.) |
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Collana |
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Selected topics in electronics and systems ; ; v. 33 |
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Altri autori (Persone) |
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ShurMichael |
DavisRobert F <1942-> (Robert Foster) |
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Disciplina |
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Soggetti |
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Gallium nitride |
Semiconductors |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN |
Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion |
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Sommario/riassunto |
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The unique materials properties of GaN-based semiconductors |
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