Densell Hollis Esquire, his worthy and learned speech in Parliament on Thnrfeday [sic] the thirtieth of December 1641 [[electronic resource] ] : vpon the reading of the petition and protestation of the twelve bishoppes, for which they were accused of high treason, and committed to the Tower : wherein is discovered the danger of this protestation, that it is both against the King and his royall prerogatives, the priviledges of Parliaments, the liberties of the subject, and the subvertion of the fundamental lawes of this kingdome

• Record Nr.: UNISA996385283903316
• Autore: Holles Denzil Holles, Baron, <1599-1680.>
• Pubbl/distr/stampa: London, : Printed for Iohn Thomas and Thomas Bankes, 1641
• Descrizione fisica: [2], 6 p
• Soggetti: Bishops - England
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Reproduction of original in Union Theological Seminary Library, New York.
• Sommario/riassunto: eebo-0160

Magnetic memory technology : spin-transfer-torque MRAM and beyond / / Denny D. Tang, Chi-Feng Pai

• Record Nr.: UNINA9910830138003321
• Autore: Tang Denny D.
• Pubbl/distr/stampa: Hoboken, New Jersey : , : Wiley-IEEE Press, , [2021]; ©2021
• ISBN: 1-119-56222-8; 1-119-56226-0; 1-119-56228-7
• Descrizione fisica: 1 PDF
• Disciplina: 621.3973
• Soggetti: Magnetic memory (Computers); Nonvolatile random-access memory
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: 1. Basic electromagnetism (25 pages) -- 1.1 Introduction -- 1.2 Magnetic force, pole, field, dipole -- 1.3 Magnetic dipole moment, torque and energy -- 1.4 Magnetic flux and magnetic induction -- 1.5 Ampere's circuital law, Biot-Savart law and magnetic field from magnetic material -- 1.5.1 Ampere's Law -- 1.5.2 Biot=Savart's Law -- 1.5.3 Magnetic field from magnetic material -- 1.6 Equations, cgs-SI unit conversion tables -- -- 2 Magnetism and magnetic materials (51 pages) -- 2.1 Introduction -- 2.2 Origin of magnetization -- 2.2.1 From Ampère to Einstein -- 2.2.2 Precession -- 2.2.3 Electron spin -- 2.2.4 Spin-orbit interaction -- 2.2.5 Hund's rules -- 2.3 Classification of magnetisms -- 2.3.1 Diamagnetism -- 2.3.2 Paramagnetism -- 2.3.3 Ferromagnetism -- 2.3.4 Antiferromagnetism -- 2.3.5 Ferrimagnetism -- 2.4 Exchange interactions -- 2.4.1 Direct exchange -- 2.4.2 Indirect exchange: Superexchange -- 2.4.3 Indirect exchange: RKKY interaction -- 2.5 Magnetization in magnetic metals and oxides -- 2.5.1 Slater-Pauling curve -- 2.5.2 Rigid band model -- 2.5.3 Iron oxides and iron garnets -- 2.6 Phenomenology of magnetic anisotropy -- 2.6.1 Uniaxial anisotropy -- 2.6.2 Cubic anisotropy -- 2.7 2Origins of magnetic anisotropy -- 2.7.1 Shape anisotropy -- 2.7.2 ; Magnetocrystalline anisotropy (MCA) -- 2.7.3 Perpendicular magnetic anisotropy (PMA) -- 2.8 Magnetic domain and domain walls -- 2.8.1 Domain wall -- 2.8.2 Single domain and superparamagnetism -- -- 3 Magnetic thin films -- 3.1 Introduction -- 3.2 Magnetic thin film growth -- 3.2.1 Sputter deposition -- 3.2.2 Molecular beam epitaxy (MBE) -- 3.3 Magnetic thin film characterization -- 3.3.1 Vibrating-sample magnetometer (VSM) -- 3.3.2 Magneto-optical Kerr effect (MOKE) -- -- 4 Magnetoresistance effects (14 pages) -- 4.1 Introduction -- 4.2 Anisotropic magnetoresistance (AMR) -- 4.3 Giant magnetoresistance (GMR) -- 4.4 Tunneling magnetoresistance (TMR) and magnetic tunnel junction (MTJ).; 4.5 Contemporary MTJ designs and characterization -- -- 5 Magnetization switching and Field MRAMs (12 pages text + Figs) -- -- 5.1 Introduction -- 5.2 Magnetization reversible rotation and irreversible switching under external field -- 5.2.1 Full film and patterned device -- [homework] -- 5.2.2 Magnetization rotation and switching under a field in easy axis direction -- 5.2.3 Magnetization rotation and switching Under two orthogonal applied fields -- 5.2.4 Magnetization behavior of a Synthetic Anti-Ferromagnetic (SAF) stack -- 5.3 Field MRAMs -- 5.3.1 MTJ of Field MRAM -- 5.3.2 Half select bit disturbance issue -- 5.4 Applications -- references -- -- 6 Spin current and spin dynamics (17 pages) -- 6.1 Introduction to Hall effects -- 6.1.1 Ordinary Hall effect -- 6.1.2 Anomalous Hall effect and spin Hall effect -- 6.2 Spin current -- 6.2.1 Electro spin polarization in NM/FM/NM film stack -- 6.2.2 Non-local spin valve: Spin current injection, diffusion and inverse spin Hall effect -- 6.2.3 Generalized carrier and spin current draft-diffusion equation -- 6.3 Spin dynamics -- 6.3.1 Landau-Lifshitz and Landau-Lifshitz-Gilbert dynamics equation of motion -- 6.3.2 Ferromagnetic resonance -- 6.3.3 Spin pumping and effective damping in FM/NM film stack -- 6.3.4 FM/NM/FM coupling through spin current -- 6.4 Interaction between polarized conduction electron and local magnetization -- 6.4.1 Electron spin torque transfer to local magnetization -- 6.4.2 Macrospin model -- 6.4.3 Spin torque transfer in spin valve -- 6.4.3.1 Switching threshold current density -- 6.4.3.2 Switching time -- 6.4.4 Spin-torque transfer in magnetic tunnel junction -- 6.4.5 Spin-torque ferromagnetic resonance and torkance -- 6.5 Spin current interaction with domain wall -- 6.5.1 LLG description of domain wall motion under spin current -- 6.5.2 Threshold current density -- -- 7 Spin-torque-transfer (STT) MRAM engineering (46 pages) -- 7.1 Introduction.; 7.2 Thermal stability energy and switching energy -- 7.3 STT switching properties -- 7.3.1 Switching probability and wrote error rate (WER) -- 7.3.2 Switching current in precession regime -- 7.3.3 Switching delay o a STT-MRAM cell -- 7.3.4 Read disturb rate -- 7.3.5 Switching under a magnetic field - phase diagram -- 7.3.6 MTJ switching abnormality -- 7.3.6.1 Magnetic back hopping -- 7.3.6.2 Bifurcation switching (Ballooning in WER) -- 7.3.6.3 Domain mediated magnetic reversal -- 7.4 The integrity of MTJ tunnel barrier -- 7.4.1 Write current stress -- 7.4.2 MgO degradation model -- 7.5 Data retention -- 7.5.1 Energy barrier extraction based on bit switching probability -- 7.5.2 Energy barrier extraction based on aiding field -- 7.5.3 Energy barrier extraction with retention bake at chip level -- 7.5.4 Data retention at chip level -- 7.6 The cell design consideration and scaling -- 7.6.1 MRAM bit cell and array -- 7.6.2 CMOS options -- 7.6.3 Cell switching efficiency -- 7.6.4 The cell design considerations -- 7.6.4.1 Write current and cell size -- 7.6.4.2 Read access performance -- 7.6.4.3 READ and WRITE margin -- 7.6.4.4 Stray field control for perpendicular MTJ -- 7.6.4.5 Suppression of stochastic switching time variation ideas ; -- 7.6.5 The scaling of MTJ for memory -- 7.6.5.1 In-plane MTJ -- 7.6.5.2 Out-of-plane (perpendicular) MTJ -- 7.7 MRAM cell SPICE model -- 7.7.1 Introduction -- 7.7.2 MTJ SPICE model embedded with Macrospin calculator -- 7.8 Test chip and chip level weak bit screening methodology -- 7.8.1 READ margin bits -- 7.8.2 WRITE margin bits -- 7.8.3 Weak retention bits -- 7.8.4 Low endurance bits -- -- 8 Advanced switching MRAM modes -- -- 8.1 Introduction -- 8.2 Current Induced-Domain-wall-motion (CIDM) memory -- 8.2.1 Single-bit cell -- 8.2.2 Multi-bit cell: Racetrack -- 8.3 Spin-orbit Torque (SOT) Memory -- 8.3.1 Introduction -- 8.3.2 Spin-orbit-Torque (SOT) MRAM cells -- 8.3.2.1 In-plane SOT cell.; in-plane SOT cell structure and switching behavior -- Device engineering and Cell scaling -- 8.3.2.2 Perpendicular SOT Cell -- 8.3.3 Materials choice for SOT-MRAM cell -- 8.3.3.1 Transition metals and their alloys -- 8.3.3.2 Emergent materials systems -- 8.3.3.3 Benchmarking of SOT switching efficiency -- 8.4 Magneto-electric effects and voltage-control magnetic anisotropy (VCMA) MRAM -- 8.4.1 Magneto-electric effects -- 8.4.2 VCMA-assisted MRAMS -- 8.4.2.1 VCMA-assisted Field-MRAM -- 8.4.2.2 VCMA-assisted multi-bit-word SOT-MRAM -- 8.4.2.3 VCMA-assisted Precession-toggle MRAM -- 8.5 Relative Merit of advanced switching mode MRAMs -- -- 9 MRAM applications, market position and production (31 pages) -- 9.1 Introduction -- 9.2 Intrinsic properties and product attributes of emerging non-volatile memories -- 9.2.1 Intrinsic properties -- 9.2.2 Product attributes -- 9.3 Memory landscape and MRAM opportunity -- 9.3.1 MRAM as embedded memory in logic SoC chips -- MTJ process integration issue of embedded MRAM -- MRAM as embedded FLASH in micro-controller -- embedded MRAM cell size -- MRAM as cache memory in processor -- improvement of access latency -- 9.3.2 High-density discrete MRAM -- 9.3.2.1 Technology status -- 9.3.2.2 Ideal CMOS technology for high-density MRAM -- 9.3.3 Applications and market opportunity -- 9.3.3.1 Battery-back memory applications -- 9.3.3.2 Internet -of-things (IoT), Cybersecurity applications -- 9.3.3.3 Applications to in-memory computing, artificial intelligence (AI) -- 9.3.3.4 MRAM based Memory-driven computing -- 9.4 MRAM production -- 9.4.1 MRAM product ecosystem -- 9.4.2 MRAM production history -- 9.4.2.1 1st generation MRAM - Field MRAM -- 9.4.2.2 2nd generation MRAM - STT MRAM -- 9.4.2.3 Potential 3rd generation MRAM -SOT MRAM -- Appendix -- A. Retention bake (include two-way flip) (1 pages) -- B. Memory Functionality-based scaling (10 pages) -- C. High-bandwidth MRAM architecture (6 pages).
• Sommario/riassunto: "This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then, it goes one step forward to discuss electron spin. Following the above background discussion, readers are taught the physics of magnetic tunnel junction device (MTJ), the work horse of MRAM, for memory applications. At the end of this book, the author gives a comparison of emerging non-volatile memories (PCM, ReRAM, FeRAM and MRAM). The author also explores MRAM's unique quality among emerging memories, in that is the only one in which the atoms in the device do not move when switching states. This property makes it the most reliable and low power"--

Gully Erosion Studies from India and Surrounding Regions / / edited by Pravat Kumar Shit, Hamid Reza Pourghasemi, Gouri Sankar Bhunia

• Record Nr.: UNINA9910366654703321
• Pubbl/distr/stampa: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020
• ISBN: 3-030-23243-3
• Edizione: [1st ed. 2020.]
• Descrizione fisica: 1 online resource (XXII, 480 p. 293 illus., 267 illus. in color.)
• Collana: Advances in Science, Technology & Innovation, IEREK Interdisciplinary Series for Sustainable Development, , 2522-8722
• Disciplina: 551.41
• Soggetti: Geomorphology; Environmental management; Geographic information systems; Soil science; Geology; Environmental Management; Geographical Information System; Soil Science
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Spatial Extent, Formation Process, Reclaimability Classification System and Restoration Strategies of Gully and Ravine Lands in India -- Soil Disintegration Characteristics on Ephemeral Gully Collapsing in Lateritic Belt of West Bengal, India -- Modeling of Gully Erosion Based on Random Forest Using GIS and R -- Geomorphic Threshold and SCS-CN-Based Runoff and Sediment Yield Modelling in the Gullies of Dwarka–Brahmani Interfluve, West Bengal, India -- Assessing Gully Asymmetry Based on Cross-Sectional Morphology: A Case of Gangani Badland of West Bengal, India -- The Potential Gully Erosion Risk Mapping of River Dulung Basin, West Bengal, India Using AHP Method -- Application of Field-Monitoring Techniques to Determine Soil Loss by Gully Erosion in a Watershed in Deccan, India -- Gully Erosion Susceptibility Mapping Based on Bayesian Weight of Evidence -- Understanding the Morphology and Development of a Rill-Gully: An Empirical Study of ; Khoai Badland, West Bengal, India -- Estimation of Erosion Susceptibility and Sediment Yield in Ephemeral Channel Using RUSLE and SDR Model: Tropical Plateau Fringe Region, India -- Assessment of Potential Land Degradation in Akarsa Watershed, West Bengal, Using GIS and Multi-influencing Factor Technique -- Using Ground-Based Photogrammetry for Fine-Scale Gully Morphology Studies: Some Examples -- Effects of Grass on Runoff and Gully Bed Erosion: Concentrated Flow Experiment -- Water Flow-Induced Gully Erosion in Himalayan Watershed Cum Plateau and Alluvial Plains -- Influence of Road-Stream Crossing on the Initiation of Gully: Case Study from the Terai Region of Eastern India -- Land Degradation Processes of Silabati River Basin, West Bengal, India: A Physical Perspective -- Assessment of Gully Erosion and Estimation of Sediment Yield in Siddheswari River Basin, Eastern India, Using SWAT Model -- Role of Plant Roots to Control Rill-Gully Erosion: Hydraulic Flume Experiment -- Bamboo-Based Technology for Resource Conservation and Management of Gullied Lands in Central India -- Soil Erosion Protection on Hilly Regions Using Plant Roots: An Experimental Insight -- Planning, Designing and Construction of Series of Check Dams for Soil and Water Conservation in a Micro-watershed of Gujarat, India -- Impacts of Gully Erosion on River Water Quality and Fish Resources: A Case Study -- Gully Erosion in I. R. Iran: Characteristics, Processes, Causes, and Land Use -- Factors Affecting Gully-Head Activity in a Hilly Area Under a Semiarid Climate in Iran -- Topographic Threshold of Gully Erosion in Iran: A Case Study of Fars, Zanjan, Markazi and Golestan Provinces -- A Review on the Gully Erosion and Land Degradation in Iran -- Mapping and Preparing a Susceptibility Map of Gully Erosion Using the MARS Model -- Gully Erosion Susceptibility Assessment Through the SVM Machine Learning Algorithm (SVM-MLA) -- Data Mining Technique (Maximum Entropy Model) for Mapping Gully Erosion Susceptibility in the Gorganrood Watershed, Iran -- Land Degradation and Community Resilience in Rural Mountain Area of Java, Indonesia -- Spatial Analysis and Prediction of Soil Erosion in a Complex Watershed of Cameron Highlands, Malaysia.
• Sommario/riassunto: This book offers the scientific basis for the ample evaluation of badland management in India and some surrounding regions. It examines the processes operating in the headwaters and main channels of ephemeral rivers in lateritic environments of India. In particular, the book covers a range of vital topics in the areas of gully erosion and water to soil erosion at lateritic uplands regions of India and other regions in Asia. It explores the probable gully erosion modeling through Remote Sensing & GIS Techniques. It is divided into three units. Unit I deals with the introduction of badland, types of badland and the process of badland formation. Unit II is devoted to a description of quantitative measurements. Unit III deals with the control and management processes related to various issues from different regions. As such this book serves as a reference book for research activities in this area. It is an efficient guide for aspiring researchers in applied geography,explaining advanced techniques to help students recognize both simple and complex concepts.