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1. |
Record Nr. |
UNINA9910637795203321 |
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Autore |
Toledo Miguel Á |
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Titolo |
Dam Safety. Overtopping and Geostructural Risks |
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Pubbl/distr/stampa |
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Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
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ISBN |
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Descrizione fisica |
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1 electronic resource (270 p.) |
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Soggetti |
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Technology: general issues |
History of engineering & technology |
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Lingua di pubblicazione |
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Materiale a stampa |
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Livello bibliografico |
Monografia |
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Sommario/riassunto |
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This reprintshows recent advances in dam safety related to overtopping and the prevention, detection, and risk assessment of geostructural risks. Related to overtopping, the issues treated are: the throughflow and failure process of rockfill dams; the protection of embankment dams against overtopping by means of a rockfill toe or wedge-shaped blocks; and the protection of concrete dams with highly convergent chutes. In the area of geostructural threats, the detection of anomalies in dam behavior from monitoring data using a combination of machine learning techniques, the numerical modeling of seismic behavior of concrete dams, and the determination of the impact area downstream of ski-jump spillways are also studied and discussed. In relation to risk assessment, three chapters deal with the development of fragility curves for dikes and dams in relation to various failure mechanisms. |
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2. |
Record Nr. |
UNINA9910346846903321 |
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Autore |
Seo Jung-Hun |
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Titolo |
Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
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Pubbl/distr/stampa |
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MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
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Basel, Switzerland : , : MDPI, , 2019 |
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ISBN |
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Descrizione fisica |
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1 electronic resource (138 p.) |
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Soggetti |
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History of engineering and technology |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Sommario/riassunto |
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. |
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