1.

Record Nr.

UNINA9910300410703321

Autore

Takayama Akari

Titolo

High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films / / by Akari Takayama

Pubbl/distr/stampa

Tokyo : , : Springer Japan : , : Imprint : Springer, , 2015

ISBN

4-431-55028-3

Edizione

[1st ed. 2015.]

Descrizione fisica

1 online resource (92 p.)

Collana

Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053

Disciplina

530

530.417

530.8

537.622

Soggetti

Surfaces (Physics)

Interfaces (Physical sciences)

Thin films

Spectroscopy

Microscopy

Materials—Surfaces

Physical measurements

Measurement   

Semiconductors

Surface and Interface Science, Thin Films

Spectroscopy and Microscopy

Surfaces and Interfaces, Thin Films

Measurement Science and Instrumentation

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

Introduction -- Basic Principle of Photoemission Spectroscopy and Spin Detector -- Development of High Resolution Spin-Resolved Photoemission Spectrometer -- Anomalous Rashba Effect of a Bi Thin Film on Si(111) -- Rashba Effect at Interface of a Bi Thin Film on Si(111) -- Conclusion.



Sommario/riassunto

In this thesis, the author has developed a high-resolution spin-resolved photoemission spectrometer that achieves the world-best energy resolution of 8 meV. The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.   The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect. Unlike the conventional Rashba splitting, an asymmetric in-plane spin polarization and a tremendous out-of-plane spin component were observed. Moreover, the author found that the spin polarization of Rashba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface.