1.

Record Nr.

UNINA9910300393003321

Autore

Zhang Sen

Titolo

Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures / / by Sen Zhang

Pubbl/distr/stampa

Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2014

ISBN

3-642-54839-3

Edizione

[1st ed. 2014.]

Descrizione fisica

1 online resource (143 p.)

Collana

Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053

Disciplina

538.3

Soggetti

Magnetism

Magnetic materials

Materials—Surfaces

Thin films

Electronic circuits

Materials science

Surfaces (Physics)

Interfaces (Physical sciences)

Magnetism, Magnetic Materials

Surfaces and Interfaces, Thin Films

Electronic Circuits and Devices

Characterization and Evaluation of Materials

Surface and Interface Science, Thin Films

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di contenuto

Introduction -- Experimental Methods -- Electric-field control of Magnetism in CoFeB/PMN-PT(001) Structure.- Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure -- Summary and Outlook.

Sommario/riassunto

This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis



of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109° ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications.