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Record Nr. |
UNINA9910300393003321 |
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Autore |
Zhang Sen |
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Titolo |
Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures / / by Sen Zhang |
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Pubbl/distr/stampa |
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Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2014 |
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ISBN |
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Edizione |
[1st ed. 2014.] |
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Descrizione fisica |
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1 online resource (143 p.) |
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Collana |
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Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053 |
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Disciplina |
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Soggetti |
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Magnetism |
Magnetic materials |
Materials—Surfaces |
Thin films |
Electronic circuits |
Materials science |
Surfaces (Physics) |
Interfaces (Physical sciences) |
Magnetism, Magnetic Materials |
Surfaces and Interfaces, Thin Films |
Electronic Circuits and Devices |
Characterization and Evaluation of Materials |
Surface and Interface Science, Thin Films |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di contenuto |
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Introduction -- Experimental Methods -- Electric-field control of Magnetism in CoFeB/PMN-PT(001) Structure.- Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure -- Summary and Outlook. |
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Sommario/riassunto |
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This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis |
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of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109° ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications. |
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