1.

Record Nr.

UNINA9910300371903321

Autore

Nowozin Tobias

Titolo

Self-Organized Quantum Dots for Memories : Electronic Properties and Carrier Dynamics / / by Tobias Nowozin

Pubbl/distr/stampa

Cham : , : Springer International Publishing : , : Imprint : Springer, , 2014

ISBN

3-319-01970-8

Edizione

[1st ed. 2014.]

Descrizione fisica

1 online resource (163 p.)

Collana

Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053

Disciplina

004.53

Soggetti

Semiconductors

Nanotechnology

Electronic circuits

Computer storage devices

Electronic Circuits and Devices

Nanotechnology and Microengineering

Memory Structures

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Doctoral thesis accepted by the Technical University, Berlin, Germany.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

Fundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times.

Sommario/riassunto

Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.   This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance



spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.