Emerging Non-Volatile Memories [[electronic resource] /] / edited by Seungbum Hong, Orlando Auciello, Dirk Wouters

• Record Nr.: UNINA9910298659403321
• Pubbl/distr/stampa: New York, NY : , : Springer US : , : Imprint : Springer, , 2014
• ISBN: 1-4899-7537-3
• Edizione: [1st ed. 2014.]
• Descrizione fisica: 1 online resource (280 p.)
• Disciplina: 530.41; 620.11; 620.11295; 620.11297
• Soggetti: Optical materials; Electronic materials; Solid state physics; Spectroscopy; Microscopy; Electrical engineering; Optical and Electronic Materials; Solid State Physics; Spectroscopy and Microscopy; Electrical Engineering
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: Part I: Ferroic Memories -- Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories -- Hybrid CMOS/magnetic memories (MRAM) and logic circuits -- Emerging Multi-Ferroic Memories -- Part II: Resistance and Phase Change Memories -- Phase-Change Materials for Data Storage Applications -- Emerging Oxide Resistance Change Memories -- Oxide based memristive nanodevices -- Part III: Probe Memories -- Ferroelectric Probe Storage Devices.
• Sommario/riassunto: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the ; field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.