1.

Record Nr.

UNINA9910254605303321

Autore

Ghatak Kamakhya Prasad

Titolo

Dispersion Relations in Heavily-Doped Nanostructures / / by Kamakhya Prasad Ghatak

Pubbl/distr/stampa

Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016

ISBN

3-319-21000-9

Edizione

[1st ed. 2016.]

Descrizione fisica

1 online resource (LV, 625 p. 31 illus.)

Collana

Springer Tracts in Modern Physics, , 0081-3869 ; ; 265

Disciplina

537.622

Soggetti

Semiconductors

Nanotechnology

Microwaves

Optical engineering

Nanoscience

Nanostructures

Solid state physics

Microwaves, RF and Optical Engineering

Nanoscale Science and Technology

Solid State Physics

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Includes index.

Nota di contenuto

From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.

Sommario/riassunto

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion,



and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.