1.

Record Nr.

UNINA9910698701403321

Autore

Wei Su-Huai

Titolo

Design of Shallow p-type Dopants in ZnO (Presentation) [[electronic resource] /] / Su-Huai Wei, J. Li, and Y. Yan

Pubbl/distr/stampa

[Place of publication not identified], : Washington, D.C., : United States. Dept. of Energy, : Oak Ridge, Tenn., : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008

Descrizione fisica

1 online resource (32 pages) : color illustrations

Collana

NREL/PR ; ; 520-43248

Altri autori (Persone)

LiJ

YanYanfa

Soggetti

Semiconductor doping

Doped semiconductors

Crystals - Defects

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Published through the Information Bridge: DOE Scientific and Technical Information.

"May 2008."

Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.

National Renewable Energy Laboratory (NREL), Golden, CO.

Sommario/riassunto

ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.



2.

Record Nr.

UNINA9910145568503321

Titolo

Drug discovery today

Pubbl/distr/stampa

[Kidlington, Oxford], : Elsevier Science Ltd

ISSN

1878-5832

Soggetti

Drugs - Design

Pharmaceutical technology

Drug Design

Technology, Pharmaceutical

Médicaments - Conception

Techniques pharmaceutiques

Periodical

periodicals.

Periodicals.

Périodiques.

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Periodico

Note generali

Refereed/Peer-reviewed