Nitrides with nonpolar surfaces : growth, properties, and devices / / edited by Tanya Paskova

• Record Nr.: UNINA9910144126303321
• Pubbl/distr/stampa: Weinheim, [Germany] : , : Wiley-VCH Verlag GmbH & Co. KGaA, , 2008; ©2008
• ISBN: 1-281-94714-8; 9786611947149; 3-527-62315-9; 3-527-62316-7
• Descrizione fisica: 1 online resource (460 p.)
• Disciplina: 621.38152; 661.65
• Soggetti: Nitrides; Nitrides - Electric properties; Crystal growth; Electronic books.
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Nitrides with Nonpolar Surfaces; Contents; Preface; List of Contributors; Color Plates; Introduction; 1 Nitride Materials and Devices with Nonpolar Surfaces: Development and Prospects; 1.1 Introduction; 1.2 Historical Survey of Nonpolar Nitride Growth Achievements; 1.3 Nonpolar Nitrides Today - Key Properties and Challenges; 1.3.1 Morphology; 1.3.2 Microstructure; 1.3.3 Strain; 1.3.4 Optical Properties; 1.3.5 Optical Phonons; 1.3.6 Electrical Properties; 1.4 Nonpolar and Semipolar Nitride-based Devices Today; 1.5 Prospects in the Development of Nonpolar Nitrides and Devices; 1.6 Summary; AcknowledgmentsReferences; Part I Growth; 2 Growth of Planar and Reduced-defect Density Nonpolar GaN Films by Hydride Vapor Phase Epitaxy; 2.1 Introduction; 2.2 Planar a-plane GaN Growth; 2.3 Lateral Epitaxial Overgrowth of a-plane GaN Films; 2.4 Planar m-plane GaN Heteroepitaxy; 2.5 Lateral Epitaxial Overgrowth of m-plane GaN; 2.6 ; Conclusion; References; 3 Nonpolar GaN Quasi-Wafers Sliced from Bulk GaN Crystals Grown by High-Pressure Solution and HVPE Methods; 3.1 Introduction; 3.2 Bulk Crystallization of GaN; 3.2.1 Seed Crystals; 3.2.2 Bulk Crystallization of GaN by HVPE on Small Seeds; 3.2.3 HVPE of GaN on Platelet-shaped Seeds3.2.4 HVPE of GaN on Needle-shaped Seeds; 3.3 Nonpolar Quantum Structures; 3.3.1 GaN/AlGaN Quantum Structures Grown by PA Molecular Beam Epitaxy; 3.3.2 Optical Properties of Nonpolar Structures Grown on GaN Quasi-Wafers Sliced from Bulk GaN Crystals; 3.4 Summary; Acknowledgment; References; 4 Heteroepitaxial Growth of Nonpolar-face AlN on SiC Substrates by Plasma-assisted Molecular-beam Epitaxy; 4.1 Introduction; 4.2 The Crystalline Structure of AlN and SiC; 4.3 AlN/6H-SiC (1100); 4.4 AlN/6H-SiC (1120); 4.5 AlN/4H-SiC (1120); 4.6 Reducing Structural Defect Densities in 4H-AlN4.7 AlN/4H-SiC (1100); 4.8 Properties of 4H-AlN; 4.9 Nonpolar AlGaN and AlGaN/AlN Heterostructures; 4.10 Conclusion; Acknowledgments; References; 5 Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,In)N Films on Lattice-Mismatched Substrates; 5.1 Introduction; 5.2 Growth and Properties of a-plane GaN on r-plane Sapphire; 5.3 Growth and Properties of m-plane GaN on m-plane SiC; 5.4 Growth of GaN on Semipolar (3038) 4H-SiC Substrate; 5.5 Reduction of Dislocation Density and Stacking-fault Density by Sidewall Seeded Epitaxial Lateral Overgrowth5.6 Conductivity Control of Nonpolar GaN; 5.6.1 n-type GaN; 5.6.2 p-type GaN; 5.7 Heterostructures; 5.7.1 GaInN/GaNMQWs; 5.7.2 AlGaN/GaN Single Heterostructure; 5.8 Characterization of Visible LEDs on Nonpolar GaN; 5.9 Summary; Acknowledgments; References; Further Reading; 6 GaN Films and Quantum Wells with Nonpolar Surfaces: Growth and Structural Properties; 6.1 Introduction; 6.2 Substrates; 6.2.1 γ-LiAlO(2); 6.2.1.1 Properties and Merits; 6.2.1.2 Drawbacks; 6.2.1.3 Orientation Relationship andMicrostructure
• Sommario/riassunto: This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the

Goliath's revenge : how established companies turn the tables on digital disruptors / / Todd Hewlin, Scott A. Snyder

• Record Nr.: UNINA9910816981603321
• Autore: Hewlin Todd
• Pubbl/distr/stampa: Hoboken, New Jersey : , : Wiley, , 2019
• ISBN: 1-119-54191-3; 1-119-54190-5
• Edizione: [1st edition]
• Descrizione fisica: 1 online resource (291 pages)
• Classificazione: BUS041000BUS000000BUS071000
• Disciplina: 658.05
• Soggetti: Information technology - Management; Business enterprises - Technological innovations - Management; Electronic records; BUSINESS & ECONOMICS / Management; BUSINESS & ECONOMICS / General; BUSINESS & ECONOMICS / Leadership
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Includes index.
• Nota di contenuto: Machine generated contents note: Foreword Chapter 1 How Much Time Do You Have? Chapter 2 The Incumbent's Advantage Chapter 3 Winner Takes Most Chapter 4 Rule #1: Deliver Step-Change Customer Outcomes Chapter 5 Rule #2: Pursue Big I and Little I Innovation Chapter 6 Rule #3: Use Your Data as Currency Chapter 7 Rule #4: Accelerate Through Innovation Networks Chapter 8 Rule #5: Value Talent Over Technology Chapter 9 Rule #6: Reframe Your Purpose Chapter 10 Company View: Your Disruptor's Playbook Chapter 11 Career View: Disrupt Yourself Appendix New Rules Templates About the Authors Index.
• Sommario/riassunto: Harness your company’s incumbent advantages to win the digital disruption game Goliath’s Revenge is the practical guide for how executives and aspiring leaders of established companies can run the Silicon Valley playbook for themselves and capitalize on digital disruption. Technologies like artificial intelligence, robotics, internet of things, blockchain, and immersive experiences are changing the basis of competition in every industry. New competitors are emerging while ; traditional ones are falling behind. Periods of intense change provide remarkable opportunities. Goliath’s Revenge delivers an insider’s view of how industry leaders like General Motors, NASA, The Weather Channel, Hitachi, Mastercard, Procter & Gamble, Penn Medicine, Discovery, and Cisco are accelerating innovation, building new skills, and disrupting themselves to come out stronger in this post-digital age. Learn how to leverage your company’s scale, reach, data, and expertise to launch breakthrough offerings that fend off attackers and secure your position as a future industry leader. Using real success cases and recommendations, this invaluable resource shows how to realign your business model, reset your talent development priorities, and retake market share lost to digital-ready competitors. Drawing from extensive experience in digital transformation, leadership development, and strategic planning, the authors show how established companies can switch from defense to offense to thrive in this new digital environment. Learn the six new rules that separate winners from losers in the age of digital disruption Prioritize your innovation investments to rebuild your competitive moat Employ smart cannibalization to defend your core business Deliver step-change customer outcomes to grow into adjacent markets Reframe your purpose and make talent the centerpiece of your digital innovation strategy Goliath’s Revenge is a must-read for business leaders and innovators in small, mid-sized, and large organizations trying to win the digital disruption game. This book helps you reset both your company strategy and professional development priorities for long-term success.