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Record Nr. |
UNINA9910143174803321 |
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Autore |
Kuo James B. <1956-> |
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Titolo |
Low-voltage SOI CMOS VLSI devices and circuits / / James B. Kuo, Shih-Chia Lin |
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Pubbl/distr/stampa |
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ISBN |
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1-280-26478-0 |
9786610264780 |
0-470-32128-8 |
0-471-46417-1 |
0-471-22156-2 |
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Edizione |
[1st edition] |
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Descrizione fisica |
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1 online resource (424 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Low voltage integrated circuits |
Integrated circuits - Very large scale integration |
Metal oxide semiconductors, Complementary |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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"A Wiley-Interscience publication." |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Contents; Preface; Acknowledgments; 1 Introduction; 1.1 Evolution of CMOS VLSI; 1.2 SOI versus Bulk; 1.3 Low-Voltage SOI VLSI; 1.4 Objectives; References; 2 SOI CMOS Devices-Part I; 2.1 Basic SOI Technology; 2.1.1 SOI Wafers; 2.1.2 Shallow Trench Isolation; 2.1.3 SOI Device Structure; 2.2 Back Gate Bias Effects; 2.2.1 PD versus FD; 2.2.2 Inversion versus Accumulation; 2.3 Short Channel Effects; 2.3.1 Biasing Dependence; 2.3.2 Structure Dependence; 2.3.3 Processing Dependence; 2.3.4 Subthreshold; 2.4 Narrow Channel Effects; 2.4.1 Structure Dependence; 2.4.2 Subthreshold |
2.4.3 Back Gate Bias Dependence2.4.4 Isolation Dependence; 2.5 Mobility; 2.5.1 Vertical Field Dependence; 2.5.2 Lateral Field Dependence; 2.6 Floating Body Effects; 2.6.1 Strong Inversion Kink Effects; 2.6.2 Body Contact; 2.6.3 Various Techniques to Reduce Kink Effects; 2.7 Subthreshold Behavior; 2.7.1 FD versus PD; 2.7.2 PD; 2.7.3 DIBL Dependence; 2.7.4 Latch/GIDL Behavior; 2.8 Impact lonization; |
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