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Record Nr. |
UNINA9910142692403321 |
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Autore |
Adachi Sadao <1950-> |
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Titolo |
Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
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Pubbl/distr/stampa |
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Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
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ISBN |
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1-280-26896-4 |
9786610268962 |
0-470-09034-0 |
0-470-09033-2 |
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Descrizione fisica |
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1 online resource (407 p.) |
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Collana |
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Wiley series in materials for electronic and optoelectronic applications |
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Disciplina |
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Soggetti |
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Semiconductors - Materials |
Semiconductors - Analysis |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group |
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 |
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Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity |
2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness |
3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References |
5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian |
6.2.2 Room-temperature Value |
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Sommario/riassunto |
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Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.The purpose of this book is twofold:* to discuss the key properties of the group-IV, III-V and II-VI semiconductors* to systemize these properties from a solid-state physics aspectThe majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some |
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