Handbook of nitride semiconductors and devices . Vol. 2 Electronic and optical processes in nitrides [[electronic resource] /] / Hadis Morkoc ʹ

• Record Nr.: UNINA9910139771403321
• Autore: Morkoc ʹ Hadis
• Pubbl/distr/stampa: Weinheim, : Wiley-VCH; [Chichester, : John Wiley, distributor], c2008-c2009
• ISBN: 1-282-27952-1; 9786612279522; 3-527-62841-X; 3-527-62842-8
• Descrizione fisica: 1 online resource (885 p.)
• Collana: Handbook of Nitride Semiconductors and Devices (VCH)
• Altri autori (Persone): Morkoc ʹHadis
• Disciplina: 621.38152
• Soggetti: Semiconductors - Materials; Nitrides
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Metal Contacts to GaN and Processing; Introduction; 1.1 A Primer for Semiconductor-Metal Contacts; 1.2 Current Flow in Metal-Semiconductor Junctions; 1.2.1 The Regime Dominated by Thermionic Emission; 1.2.2 Thermionic Field Emission Regime; 1.2.3 Direct Tunneling Regime; 1.2.4 Leakage Current; 1.3 GaN Schottky Barriers for High-Voltage Rectifiers; 1.4 Ohmic Contact Resistance; 1.4.1 Specific Contact Resistivity; 1.4.2 Semiconductor Resistance; 1.5 Determination of the Contact Resistivity; 1.6 Ohmic Contacts to GaN1.6.1 Nonalloyed Ohmic Contacts; 1.6.2 Alloyed Ohmic Contacts on n-Type GaN; 1.6.3 Contacts to p-Type GaN and Transparent Conducting Oxides; 1.6.4 Effect of Surface Treatment on Ohmic Contacts; 1.6.5 Case of a Forward-Biased p-n Junction in Conjunction with Nonohmic Contacts to p-GaN; 1.7 Structural Analysis of Ohmic Contacts on GaN; 1.8 Etching Techniques for III Nitrides; 1.8.1 Dry (Plasma) Etching; 1.8.1.1 Electron Cyclotron Resonance Etching; 1.8.1.2 Ion Milling; 1.8.1.3 Reactive Ion Etching; 1.8.1.4 Inductively Coupled Plasma Etching; 1.8.1.5 Selective Etching of GaN/AlGaN1.8.1.6 Dry Etching of p-GaN; 1.8.1.7 Dry Etching on Ga- and N-Face of Freestanding GaN Substrate; 1.8.1.8 Magnetron Reactive Ion Etching; 1.8.1.9 Chemically Assisted Ion Beam Etching (CAIBE); 1.8.1.10 RF Plasma Etching of GaN; 1.8.2 Laser Ablation Etching of GaN; 1.8.3 Wet Etching; 1.8.4 Photochemical Etching; 1.9 Implant Isolation; 1.10 Process Damage; References; 2 Determination of Impurity and Carrier Concentrations; Introduction; 2.1 Impurity Binding Energy; 2.2 Conductivity Type: Hot Probe and Hall Measurements; 2.2.1 Measurement of Mobility; 2.3 Semiconductor Statistics, Density of States, and Carrier Concentration2.3.1 Degeneracy Factor; 2.3.2 Charge Balance Equation and Carrier Concentration; 2.3.2.1 n-Type Semiconductor; 2.3.2.2 p-Type Semiconductor; 2.3.2.3 Multiple Occupancy of the Valence Bands; 2.4 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Appendix 2.B. Density of States in 3D, 2D, and 1D Systems; 2.B.1. Three-Dimensional Structure; 2.B.2. Two-Dimensional Structure; 2.B.3. One-Dimensional Structure; References; 3 Carrier Transport; 3.1 Prelude; 3.2 Carrier Scattering; 3.2.1 Boltzmann Transport Equation3.2.2 Impurity Scattering; 3.2.2.1 Ionized Impurity Scattering; 3.2.2.2 Neutral Impurity Scattering; 3.2.3 Acoustic Phonon Scattering; 3.2.3.1 Deformation Potential Scattering; 3.2.3.2 Piezoelectric Scattering; 3.2.4 Optical Phonon Scattering; 3.2.4.1 Nonpolar Optical Phonon Scattering; 3.2.4.2 Polar Optical Phonon Scattering; 3.2.5 Short-Range Potential-Induced Scattering; 3.2.5.1 Alloy Potential-Induced Scattering; 3.2.5.2 Potential Barrier Scattering; 3.2.5.3 Potential Well Scattering; 3.2.5.4 Space Charge Scattering; 3.2.5.5 Dipole Scattering; 3.2.6 Carrier-Carrier Scattering
• Sommario/riassunto: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Orbital interaction theory of organic chemistry [[electronic resource] /] / by Arvi Rauk

• Record Nr.: UNINA9910831075703321
• Autore: Rauk Arvi <1942->
• Pubbl/distr/stampa: New York, : Wiley-Interscience, 2001
• ISBN: 1-280-26470-5; 9786610264704; 0-470-35106-3; 0-471-46184-9; 0-471-22041-8
• Edizione: [2nd ed.]
• Descrizione fisica: 1 online resource (360 p.)
• Disciplina: 547.128; 547/.128
• Soggetti: Molecular orbitals; Physical organic chemistry
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: "A Wiley-Interscience publication."
• Nota di bibliografia: Includes bibliographical references (p. 313-324) and index.
• Nota di contenuto: CONTENTS; PREFACE; 1 SYMMETRY AND STEREOCHEMISTRY; Purpose; Definition of a Group; Molecular Point Groups; Schoenflies Notation; Interrelations of Symmetry Elements; Type Classification; Isomerism and Measurements; Stereoisomerism of Molecules; Stereotopic Relationships of Groups in Molecules; Asymmetric Synthesis and Stereochemistry; NMR and Stereochemistry; Symmetry and Structural Parameters; Note on Hybridization; Symmetry and Orbitals; Atomic Orbitals; Molecular and Group Orbitals; In What Combination?; 2 MOLECULAR ORBITAL THEORY; Introduction; Electronic Schrödinger Equation (A.1); Fock Equations (A.42)The Basis Set (STO-3G, 6-31G*, and All That); Orbital Energies and Orbitals; Representation of MOs; Total Energies and the Hartree-Fock Limit; Successes and Failures of Hartree-Fock Theory; Beyond Hartree-Fock; Density Functional Theory; Geometry Optimization; Normal Coordinates and Harmonic Frequency Analysis; Zero Point Vibrational Energies; 3 ORBITAL INTERACTION THEORY; Relationship to Hartree-Fock Equations; Hückel Approximation; Orbital ; Energies and Total Electronic Energy; Case Study of a Two-Orbital Interaction; Case 1: ε[sub(A)] = ε[sub(B)], S[sub(AB)] = 0; Case 2: ε[sub(A)] = ε[sub(B)], [sub(AB)] > 0, [sub(AB)] « 1Case 3: ε[sub(A)] > ε[sub(B)], S[sub(AB)] = 0; Case 4: ε[sub(A)] > ε[sub(B)], S[sup(AB)] > 0; Effect of Overlap; Energetic Effect of Overlap; Orbital Effect of Overlap; First Look at Bonding; Relationship to Perturbation Theory; Generalizations for Intermolecular Interactions; Energy and Charge Distribution Changes from Orbital Interaction; Four-Electron, Two-Orbital Interaction; Three-Electron, Two-Orbital Interaction; Two-Electron, Two-Orbital Interaction; One-Electron, Two-Orbital Interaction; Zero-Electron, Two-Orbital Interaction; Interactions between Molecules: Many Electrons, Many OrbitalsGeneral Principles Governing the Magnitude of h[sub(AB)] and S[sub(AB)]; Interactions of MOs; Electrostatic Effects; Group Orbitals; Zero-Coordinated Atoms; Monocoordinated Atoms; Dicoordinated Atoms; Tricoordinated Atoms; Tetracoordinated Atoms; Assumptions for Application of Qualitative MO Theory; Example: Carbonyl Group; Construction of Interaction Diagram; Interpretation of Interaction Diagram; Chemical Reactivity; Why Does It Work and When Might it Not?; 4 SIGMA BONDS AND ORBITAL INTERACTION THEORY; C-X σ Bonds: X = C, N, O, F and X = F, Cl, Br, Iσ Bonds: Homolytic versus Heterolytic Cleavage; Heterolytic Cleavage of σ Bonds Involving C or H; Homolytic Cleavage of σ Bonds Involving C or H; Homonuclear σ Bonds C-C, N-N, O-O, F-F, Cl-Cl, Br-Br, and I-I; Interactions of σ Bonds; σ Bonds as Electron Donors or Acceptors; σ Bonds as Electron Acceptors; As a σ Acceptor; As a π Acceptor; σ Bonds as Electron Donors; As a σ Donor; As a π Donor; Bonding in Cyclopropane; 5 SIMPLE HÜCKEL MOLECULAR ORBITAL THEORY; Simple Hückel Assumptions; Charge and Bond Order in SHMO Theory: (S[sub(AB)] = 0, One Orbital per Atom)
• Sommario/riassunto: A practical introduction to orbital interaction theory and its applications in modern organic chemistry Orbital interaction theory is a conceptual construct that lies at the very heart of modern organic chemistry. Comprising a comprehensive set of principles for explaining chemical reactivity, orbital interaction theory originates in a rigorous theory of electronic structure that also provides the basis for the powerful computational models and techniques with which chemists seek to describe and exploit the structures and thermodynamic and kinetic stabilities of molecules. Orbital Interaction