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Record Nr. |
UNINA9910139771403321 |
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Autore |
Morkoc ʹ Hadis |
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Titolo |
Handbook of nitride semiconductors and devices . Vol. 2 Electronic and optical processes in nitrides [[electronic resource] /] / Hadis Morkoc ʹ |
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Pubbl/distr/stampa |
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Weinheim, : Wiley-VCH |
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[Chichester, : John Wiley, distributor], c2008-c2009 |
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ISBN |
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1-282-27952-1 |
9786612279522 |
3-527-62841-X |
3-527-62842-8 |
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Descrizione fisica |
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1 online resource (885 p.) |
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Collana |
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Handbook of Nitride Semiconductors and Devices (VCH) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Semiconductors - Materials |
Nitrides |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Metal Contacts to GaN and Processing; Introduction; 1.1 A Primer for Semiconductor-Metal Contacts; 1.2 Current Flow in Metal-Semiconductor Junctions; 1.2.1 The Regime Dominated by Thermionic Emission; 1.2.2 Thermionic Field Emission Regime; 1.2.3 Direct Tunneling Regime; 1.2.4 Leakage Current; 1.3 GaN Schottky Barriers for High-Voltage Rectifiers; 1.4 Ohmic Contact Resistance; 1.4.1 Specific Contact Resistivity; 1.4.2 Semiconductor Resistance; 1.5 Determination of the Contact Resistivity |
1.6 Ohmic Contacts to GaN1.6.1 Nonalloyed Ohmic Contacts; 1.6.2 Alloyed Ohmic Contacts on n-Type GaN; 1.6.3 Contacts to p-Type GaN and Transparent Conducting Oxides; 1.6.4 Effect of Surface Treatment on Ohmic Contacts; 1.6.5 Case of a Forward-Biased p-n Junction in Conjunction with Nonohmic Contacts to p-GaN; 1.7 Structural Analysis of Ohmic Contacts on GaN; 1.8 Etching Techniques for III Nitrides; 1.8.1 Dry (Plasma) Etching; 1.8.1.1 Electron Cyclotron Resonance Etching; 1.8.1.2 Ion Milling; 1.8.1.3 Reactive Ion Etching; 1.8.1.4 Inductively Coupled Plasma Etching |
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1.8.1.5 Selective Etching of GaN/AlGaN1.8.1.6 Dry Etching of p-GaN; 1.8.1.7 Dry Etching on Ga- and N-Face of Freestanding GaN Substrate; 1.8.1.8 Magnetron Reactive Ion Etching; 1.8.1.9 Chemically Assisted Ion Beam Etching (CAIBE); 1.8.1.10 RF Plasma Etching of GaN; 1.8.2 Laser Ablation Etching of GaN; 1.8.3 Wet Etching; 1.8.4 Photochemical Etching; 1.9 Implant Isolation; 1.10 Process Damage; References; 2 Determination of Impurity and Carrier Concentrations; Introduction; 2.1 Impurity Binding Energy; 2.2 Conductivity Type: Hot Probe and Hall Measurements; 2.2.1 Measurement of Mobility |
2.3 Semiconductor Statistics, Density of States, and Carrier Concentration2.3.1 Degeneracy Factor; 2.3.2 Charge Balance Equation and Carrier Concentration; 2.3.2.1 n-Type Semiconductor; 2.3.2.2 p-Type Semiconductor; 2.3.2.3 Multiple Occupancy of the Valence Bands; 2.4 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Appendix 2.B. Density of States in 3D, 2D, and 1D Systems; 2.B.1. Three-Dimensional Structure; 2.B.2. Two-Dimensional Structure; 2.B.3. One-Dimensional Structure; References; 3 Carrier Transport; 3.1 Prelude; 3.2 Carrier Scattering |
3.2.1 Boltzmann Transport Equation3.2.2 Impurity Scattering; 3.2.2.1 Ionized Impurity Scattering; 3.2.2.2 Neutral Impurity Scattering; 3.2.3 Acoustic Phonon Scattering; 3.2.3.1 Deformation Potential Scattering; 3.2.3.2 Piezoelectric Scattering; 3.2.4 Optical Phonon Scattering; 3.2.4.1 Nonpolar Optical Phonon Scattering; 3.2.4.2 Polar Optical Phonon Scattering; 3.2.5 Short-Range Potential-Induced Scattering; 3.2.5.1 Alloy Potential-Induced Scattering; 3.2.5.2 Potential Barrier Scattering; 3.2.5.3 Potential Well Scattering; 3.2.5.4 Space Charge Scattering; 3.2.5.5 Dipole Scattering |
3.2.6 Carrier-Carrier Scattering |
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Sommario/riassunto |
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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors. |
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