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1. |
Record Nr. |
UNINA9910465407303321 |
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Titolo |
Music as intangible cultural heritage [[electronic resource] ] : policy, ideology, and practice in the preservation of East Asian traditions / / edited by Keith Howard |
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Pubbl/distr/stampa |
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Burlington, Vt., : Ashgate, c2012 |
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ISBN |
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1-317-09217-1 |
1-317-09216-3 |
1-4094-3908-9 |
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Descrizione fisica |
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1 online resource (292 p.) |
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Collana |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Music - Social aspects - East Asia |
Cultural property - East Asia |
Historic preservation - East Asia |
Electronic books. |
East Asia Civilization |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Cover; Contents; List of Figures, Tables and Maps; List of Music; Notes on Contributors; 1 Introduction: East Asian Music as Intangible Cultural Heritage; 2 Intangible Cultural Heritage in China Today; 3 Ee, mang gay dor ga ey (Hey, Why Don't You Sing)? Imagining the Future for Kam Big Song; 4 Strumming the 'Lost Mouth Chord': Discourses of Preserving the Nuosu-Yi Mouth Harp; 5 From Transformation to Preservation: Music and Multi-Ethnic Unity on Television in China; 6 Authenticity and Authority; 7 A Tradition of Adaptation: Preserving the Ritual for Paebaengi; 8 Lessons from the Past |
9 Dichotomies between 'Classical' and 'Folk' in the Intangible Cultural Properties of Japan10 Promoting and Preserving the Chichibu Night Festival; 11 Whose Heritage? Cultural Properties Legislation and Regional Identity in Okinawa; References; Index |
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Sommario/riassunto |
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Focussing on music traditions, these essays explore the policy, ideology and practice of preservation and promotion of East Asian intangible cultural heritage. For the first time, Japan, Korea, China and |
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Taiwan - states that were amongst the first to establish legislation and systems for indigenous traditions - are considered together. Four chapters - one each on China, Korea, Taiwan and Japan - incorporate a foundational overview of preservation policy and practice of musical intangible cultural heritage at the state level. These chapters are complemented by a set of chapters that explore how |
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2. |
Record Nr. |
UNINA9910139624603321 |
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Titolo |
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari |
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Pubbl/distr/stampa |
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London, UK, : ISTE |
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Hoboken, NJ, : Wiley, 2009 |
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ISBN |
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1-282-68859-6 |
9786612688591 |
0-470-61163-4 |
0-470-39428-5 |
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Descrizione fisica |
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1 online resource (290 p.) |
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Collana |
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Classificazione |
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Altri autori (Persone) |
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DecosterDidier <1948-> |
HarariJoseph <1961-> |
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Disciplina |
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Soggetti |
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Optical detectors |
Image converters |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; |
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1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity |
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response |
2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography |
Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas |
3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes |
3.10.1. III-V super-lattice or MQW APDs |
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Sommario/riassunto |
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Optoelectronic sensors combine optical and electronic systems for numerous applications including pressure sensors, security systems, atmospheric particle measurement, close tolerance measurement, quality control, and more. This title provides an examination of the latest research in photonics and electronics in the areas of sensors. |
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