| |
|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA990005469840403321 |
|
|
Autore |
De Samuele Cagnazzi, Luca <1764-1852> |
|
|
Titolo |
Saggio sulla popolazione del regno di Puglia ne' passati tempi e nel presente / Luca De Samuele Cagnazzi |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
|
|
|
|
Descrizione fisica |
|
XXIII, 602 p., [2] tav. ; 22 cm |
|
|
|
|
|
|
Collana |
|
Biblioteca istorica della antica e nuova Italia ; 145 |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Locazione |
|
|
|
|
|
|
|
|
Collocazione |
|
301.32 DES 1 |
COLLEZ. 675 (145) |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
|
|
|
|
|
|
|
2. |
Record Nr. |
UNINA9910132255303321 |
|
|
Titolo |
Topological insulators : fundamentals and perspectives / / edited by Frank Ortmann, Stephan Roche and Sergio O. Valenzuela ; with a foreword by Laurens W. Molenkamp ; contributors, Irene Aguilera [and thirty-five others] |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Weinheim, Germany : , : Wiley-VCH, , 2015 |
|
©2015 |
|
|
|
|
|
|
|
|
|
ISBN |
|
3-527-68160-4 |
3-527-68158-2 |
3-527-68159-0 |
|
|
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (434 p.) |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Condensed matter |
Topological dynamics |
Nanostructured materials |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references at the end of each chapters and index. |
|
|
|
|
|
|
|
|
Nota di contenuto |
|
Cover; Title Page; Copyright; Contents; List of Contributors; Preface; Foreword; Part I: Fundamentals; Chapter 1 Quantum Spin Hall Effect and Topological Insulators; References; Chapter 2 Hybridization of Topological Surface States and Emergent States; 2.1 Introduction; 2.2 Topological Phases and Surface States; 2.2.1 Topological Insulators and Z2 Topological Numbers; 2.2.2 Weyl Semimetals; 2.2.3 Phase Transition between Topological Insulators and Weyl semimetals; 2.3 Hybridization of Topological Surface States and Emergent States; 2.3.1 Chirality of the Surface Dirac Cones; 2.3.2 Thin Film |
2.3.3 Interface between Two TIs2.3.4 Superlattice; 2.4 Summary; Acknowledgments; References; Chapter 3 Topological Insulators in Two Dimensions; 3.1 Introduction; 3.2 2D TIs: Inverted HgTe/CdTe and Inverted InAs/GaSb Quantum Wells; 3.2.1 HgTe/CdTe Quantum Wells; 3.2.2 The System InAs/GaSb; 3.3 Magneto-Transport Experiments in HgTe Quantum Wells; 3.3.1 Sample Fabrication; 3.3.2 Transition from |
|
|
|
|
|
|
|
|
|
|
|
n- to p-Conductance; 3.3.3 Magnetic-Field-Induced Phase Transition; 3.4 The QSH effect in HgTe Quantum Wells; 3.4.1 Measurements of the Longitudinal Resistance; 3.4.2 Transport in Helical Edge States |
3.4.3 Nonlocal Measurements3.4.4 Spin Polarization of the QSH Edge States; 3.5 QSH Effect in a Magnetic Field; 3.6 Probing QSH Edge States at a Local Scale; 3.7 QSH Effect in InAs/GaSb Quantum Wells: Experiments; 3.8 Conclusion and Outlook; Acknowledgements; References; Chapter 4 Topological Insulators, Topological Dirac semimetals, Topological Crystalline Insulators, and Topological Kondo Insulators; 4.1 Introduction; 4.2 Z2 Topological Insulators; 4.3 Topological Kondo Insulator Candidates; 4.4 Topological Quantum Phase Transitions; 4.5 Topological Dirac Semimetals |
4.6 Topological Crystalline Insulators4.7 Magnetic and Superconducting Doped Topological Insulators; Acknowledgements; References; Part II: Materials and Structures; Chapter 5 Ab Initio Calculations of Two-Dimensional Topological Insulators; 5.1 Introduction; 5.2 Early Examples of 2D TIs; 5.2.1 Graphene and the Quantum Spin Hall Effect; 5.2.2 HgTe: Band Inversion and Topology in a 2D TI; 5.3 Thin Bi and Sb Films; 5.3.1 Bilayers; 5.3.2 Thicker Layers; 5.3.3 Alloyed Layers; 5.3.4 Supported Layers; 5.4 Compounds; 5.4.1 Binary Compounds of A2B3 Type |
5.4.2 Ternary Compounds: A'A2B4 and A'2A2B4 Types5.5 Summary; Acknowledgments; References; Chapter 6 Density Functional Theory Calculations of Topological Insulators; 6.1 Introduction; 6.2 Methodology; 6.2.1 Foundations of Density Functional Theory; 6.2.2 Practical Aspects of DFT Calculations; 6.2.3 Including Spin-Orbit Interactions; 6.2.4 Calculating Z2 Topological Invariants; 6.3 Bismuth Chalcogenide Topological Insulators: A Case Study; 6.3.1 Bulk Band Structures of Bi2Se3 and Bi2Te3; 6.3.2 Topologically Protected States at the (111) Surface of Bismuth Chalcogenides |
6.3.3 Nonstoichiometric and Functionalized Terminations of the Bi2Se3 (111) Surface |
|
|
|
|
|
|
Sommario/riassunto |
|
Frank Ortmann is Head of the Computational Nanoelectronics group at the Institute for Materials Science at the Technische Universität Dresden, Germany. He is specialized on large-scale electronic transport simulations linked with ab initio electronic structure methods and on nanoelectronics of materials. Frank Ortmann studied physics at the University of Jena, Germany, where he received his PhD for a work on the topic of charge transport in organic crystals in 2009. He moved to the French Commissariat a l'Energie Atomique et aux Energies Alternatives Grenoble, France, for a postdoctoral stay f |
|
|
|
|
|
|
|
| |