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1. |
Record Nr. |
UNINA990000257860403321 |
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Autore |
Weber, Thomas William |
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Titolo |
An introduction to process dynamics and control / Thomas W. Weber |
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Pubbl/distr/stampa |
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New York : John Wiley & sons, copyr. 1973 |
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ISBN |
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Descrizione fisica |
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XII, [2], 434 p. ill. 24 cm |
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Disciplina |
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Locazione |
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Collocazione |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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2. |
Record Nr. |
UNINA9910130882403321 |
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Autore |
Scheer Roland |
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Titolo |
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock |
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Pubbl/distr/stampa |
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Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 |
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ISBN |
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1-283-30246-2 |
9786613302465 |
3-527-63371-5 |
3-527-63370-7 |
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Descrizione fisica |
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1 online resource (386 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Photovoltaic cells - Materials |
Chalcogenides |
Compound semiconductors |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients |
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function |
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit |
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient |
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients |
4.2.2 Lattice Dynamics |
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Sommario/riassunto |
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This first comprehensive description of the most important material properties and device aspects closes the gap between general books on solar cells and journal articles on chalcogenide-based photovoltaics.Written by two very renowned authors with years of practical experience in the field, the book covers II-VI and I-III-VI2 materials as well as energy conversion at heterojunctions. It also discusses the latest semiconductor heterojunction models and presents modern analysis concepts. Thin film technology is explained with an emphasis |
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on current and future techniques for mass product |
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3. |
Record Nr. |
UNINA9910710259903321 |
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Autore |
Chuang T. J |
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Titolo |
Effects of crack growth on the load-displacement characteristics of precracked specimens under bending / / T. J. Chuang; E. R. Fuller Jr.; R. J. Fields; L. Chuck |
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Pubbl/distr/stampa |
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Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1982 |
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Descrizione fisica |
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Collana |
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Altri autori (Persone) |
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ChuangT. J |
ChuckL |
FieldsR. J |
FullerE. R., Jr |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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1982. |
Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes. |
Title from PDF title page. |
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Nota di bibliografia |
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Includes bibliographical references. |
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