1.

Record Nr.

UNINA990005948860403321

Autore

Romano, Santi

Titolo

Responsabilità dello Stato / Santi Romano

Pubbl/distr/stampa

Roma : Soc. Editrice Laziale, 1903

Descrizione fisica

19 p. ; 22 cm

Disciplina

342

Locazione

FGBC

Collocazione

Massari Busta 20 (31)

Lingua di pubblicazione

Italiano

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Estratto dal Giornale "La Legge"

2.

Record Nr.

UNINA990005265000403321

Autore

Pfohl, Gerhard

Titolo

Greek poems on Stones / edited by Gerhard Pfhol

Pubbl/distr/stampa

Leiden : E. J. Brill, 1967

Descrizione fisica

v. ; 20 cm

Collana

Textus minores ; 36

Locazione

FLFBC

Collocazione

P2B-100-PFOHL G.-1967

P2B-100-PFOHL G.-1967 bis

Lingua di pubblicazione

Inglese

Greco Moderno

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di contenuto

1.: Epitaphs : from the Seventh to the Fifth centuries B. C.



3.

Record Nr.

UNISA990001017200203316

Autore

VOVELLE, Michel

Titolo

La Francia rivoluzionaria : la caduta della monarchia : 1787-1792 / Michel Vovelle

Pubbl/distr/stampa

Roma, : Laterza, 1992

Edizione

[2. ed]

Descrizione fisica

352 p : ill. ; 21 cm

Collana

Biblioteca universale Laterza ; 200

Disciplina

944.041

Soggetti

Rivoluzione francese - 1789-1792

Collocazione

X.2.B. 117(VARIE COLL. 552/200)

Lingua di pubblicazione

Italiano

Formato

Materiale a stampa

Livello bibliografico

Monografia



4.

Record Nr.

UNINA9910830439703321

Autore

Defaÿ Emmanuel

Titolo

Ferroelectric dielectrics integrated on silicon [[electronic resource] /] / edited by Emmanuel Defay

Pubbl/distr/stampa

London, : ISTE Ltd.

Hoboken, N.J., : John Wiley, 2011

ISBN

1-118-60275-7

1-118-60276-5

1-118-60280-3

Edizione

[1st edition]

Descrizione fisica

1 online resource (464 p.)

Collana

ISTE

Altri autori (Persone)

DefaÿEmmanuel

Disciplina

621.3815/2

621.38152

Soggetti

Ferroelectric thin films

Silicon - Electric properties

Electric batteries - Corrosion

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Adapted and updated from: Dielectriques ferroelectriques integres sur silicium, published in France by Hermes Science/Lavoisier, 2011.

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. The Thermodynamic Approach; 1.1. Background; 1.2. The functions of state; 1.3. Linear equations, piezoelectricity; 1.4. Nonlinear equations, electrostriction; 1.5. Thermodynamic modeling of the ferroelectric-paraelectricphase transition; 1.5.1. Assumption on the elastic Gibbs energy; 1.5.2. Second-order transition; 1.5.3. Effect of stress; 1.5.4. First-order transition; 1.6. Conclusion; 1.7. Bibliography; Chapter 2. Stress Effect on Thin Films; 2.1. Introduction; 2.2. Modeling the system under consideration

2.3. Temperature-misfit strain phase diagrams for monodomain films2.3.1. Phase diagram construction from the Landau-Ginzburg-Devonshire theory; 2.3.2. Calculations limitations; 2.4. Domain stability map; 2.4.1. Presentation and description of the framework of study; 2.4.2. Main contributions to the total energy of a film; 2.4.3. Influence of thickness; 2.4.4. Macroscopic elastic energy for each type of tetragonal domain; 2.4.5. Indirect interaction energy; 2.4.6. Domain



structures at equilibrium; 2.4.7. Domain stability map; 2.5. Temperature-misfit strain phase diagram for polydomain films

2.6. Discussion of the nature of the "misfit strain"2.6.1. Mechanical misfit strain; 2.6.2. Thermodynamic misfit strain; 2.6.3. As an illustration; 2.7. Conclusion; 2.8. Experimental validation of phase diagrams: state of the art; 2.9. Case study; 2.10. Results; 2.10.1. Evolution of the lattice parameters; 2.10.2. Associated stresses and strains; 2.11. Comparison between the experimental data and the temperature-misfit strain phase diagrams; 2.11.1. Thin film of PZT; 2.11.2. Thin layer of PbTiO3; 2.12. Conclusion; 2.13. Bibliography; Chapter 3. Deposition and Patterning Technologies

3.1. Deposition method3.1.1. Cathodic sputtering; 3.1.2. Ion beam sputtering; 3.1.3. Pulsed laser deposition; 3.1.4. The sol-gel process; 3.1.5. The MOCVD; 3.1.6. Molecular beam epitaxy; 3.2. Etching; 3.2.1. Wet etching; 3.2.2. Dry etching; 3.3. Contamination; 3.4. Monocrystalline thin-film transfer; 3.4.1. Smart CutTM technology; 3.4.2. Bonding/thinning; 3.4.3. Interest in the material in a thin layer; 3.4.4. State of the art of the domain/applications; 3.4.5. An exemplary implementation; 3.5. Design of experiments; 3.5.1. The assumptions; 3.5.2. Reproducibility

3.5.3. How can we reduce the number of experiments?3.5.4. A DOE example: PZT RF magnetron sputtering deposition; 3.6. Conclusion; 3.7. Bibliography; Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films; 4.1. Introduction; 4.2. Some reminders of X-ray diffraction and crystallography; 4.2.1. Nature of X-rays; 4.2.2. X-ray scattering and diffraction; 4.3. Application to powder or polycrystalline thin-films; 4.4. Phase analysis by X-ray diffraction; 4.4.1. Grazing incidence diffraction; 4.4.2. De-texturing; 4.4.3. Quantitative analysis

4.5. Identification of coherent domain sizes of diffraction and micro-strains

Sommario/riassunto

This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat