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1. |
Record Nr. |
UNINA990000484740403321 |
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Autore |
Guillemin, Ernst A. |
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Titolo |
Communication Networks / Ernst A. Guillemin |
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Pubbl/distr/stampa |
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New York : Wiley & Sons, 1931-1935 |
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Descrizione fisica |
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Disciplina |
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Locazione |
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Collocazione |
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10 E II 49/1 |
10 E II 49/2 |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di contenuto |
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1. v.: The classical theory of lumped constant networks; 2. v. : The classical theory of long lines, filters and related networks |
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2. |
Record Nr. |
UNINA9910461794303321 |
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Titolo |
CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert |
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Pubbl/distr/stampa |
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Singapore : , : Pan Stanford Pub., , 2013 |
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ISBN |
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0-429-11283-1 |
981-4364-03-7 |
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Descrizione fisica |
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1 online resource (444 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Molecular electronics |
Nanotechnology |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools |
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs |
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Sommario/riassunto |
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This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for |
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the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new d |
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3. |
Record Nr. |
UNISA996279510503316 |
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Titolo |
2006 68th ARFTG Conference : measurement for emerging technologies : 28 November - 1 December 2006, Omni Interlocken Resort, Broomfield, CO / / Institute of Electrical and Electronics Engineers |
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Pubbl/distr/stampa |
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Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2006 |
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ISBN |
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Descrizione fisica |
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1 online resource (647 pages) |
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Disciplina |
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Soggetti |
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Microwaves |
Radio frequency |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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